4N25/ 4N26/ 4N27/ 4N28
Document Number 83725
Rev. 1.4, 26-Jan-05
Vishay Semiconductors
www.vishay.com
1
i179004
i179004
1
2
3
6
5
4
B
C
E
A
C
NC
Pb
Pb-free
e3
Optocoupler, Phototransistor Output, With Base Connection
Features
Isolation Test Voltage 5300 V
RMS
Interfaces with Common Logic Families
Input-output Coupling Capacitance < 0.5 pF
Industry Standard Dual-in-line 6-pin Package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
UL1577, File No. E52744 System Code H or J,
Double Protection
DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
AC Mains Detection
Reed relay driving
Switch Mode Power Supply Feedback
Telephone Ring Detection
Logic Ground Isolation
Logic Coupling with High Frequency Noise Rejection
Description
The 4N25 family is an Industry Standard Single Chan-
nel Phototransistor Coupler.This family includes the
4N25/ 4N26/ 4N27/ 4N28. Each optocoupler consists
of gallium arsenide infrared LED and a silicon NPN
phototransistor.
These couplers are Underwriters Laboratories (UL)
listed to comply with a 5300 V
RMS
isolation test volt-
age. This isolation performance is accomplished
through special Vishay manufacturing process.
Compliance to DIN EN 60747-5-2(VDE0884)/ DIN EN
60747-5-5 pending partial discharge isolation specifi-
cation is available by ordering option1.
These isolation processes and the Vishay ISO9001
quality program results in the highest isolation perfor-
mance available for a commercial plastic phototrans-
istor optocoupler.
The devices are also available in lead formed config-
uration suitable for surface mounting and are avail-
able either on tape and reel, or in standard tube
shipping containers.
Note:
For additional design information see Application
Note 45 Normalized Curves
Order Information
For additional information on the available options refer to
Option Information.
Part
Remarks
4N25
CTR > 20 %, DIP-6
4N26
CTR > 20 %, DIP-6
4N27
CTR > 10 %, DIP-6
4N28
CTR > 10 %, DIP-6
4N25-X006
CTR > 20 %, DIP-6 400 mil (option 6)
4N25-X007
CTR > 20 %, SMD-6 (option 7)
4N25-X009
CTR > 20 %, SMD-6 (option 9)
4N26-X006
CTR > 20 %, DIP-6 400 mil (option 6)
4N26-X007
CTR > 20 %, SMD-6 (option 7)
4N26-X009
CTR > 20 %, SMD-6 (option 9)
4N27-X007
CTR > 10 %, SMD-6 (option 7)
4N27-X009
CTR > 10 %, SMD-6 (option 9)
4N28-X009
CTR > 10 %, SMD-6 (option 9)
www.vishay.com
2
Document Number 83725
Rev. 1.4, 26-Jan-05
4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V
R
6.0
V
Forward current
I
F
60
mA
Surge current
t < 10
s
I
FSM
2.5
A
Power dissipation
P
diss
100
mW
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown voltage
V
CEO
70
V
Emitter-base breakdown voltage
V
EBO
7.0
V
Collector current
I
C
50
mA
Collector currrent
t < 1.0 ms
I
C
100
mA
Power dissipation
P
diss
150
mW
Parameter
Test condition
Symbol
Value
Unit
Isolation test voltage
V
ISO
5300
V
RMS
Creepage
7.0
mm
Clearance
7.0
mm
Isolation thickness between
emitter and detector
0.4
mm
Comparative tracking index
DIN IEC 112/VDE0303, part 1
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 C
R
IO
10
12
V
IO
= 500 V, T
amb
= 100 C
R
IO
10
11
Storage temperature
T
stg
- 55 to + 150
C
Operating temperature
T
amb
- 55 to + 100
C
Junction temperature
T
j
100
C
Soldering temperature
max.10 s, dip soldering:
distance to seating plane
1.5 mm
T
sld
260
C
4N25/ 4N26/ 4N27/ 4N28
Document Number 83725
Rev. 1.4, 26-Jan-05
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
1)
Indicates JEDEC registered values
Output
1)
Indicates JEDEC registered values
Coupler
1)
Indicates JEDEC registered values
Current Transfer Ratio
1)
Indicates JEDEC registered value
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
1)
I
F
= 50 mA
V
F
1.3
1.5
V
Reverse current
1)
V
R
= 3.0 V
I
R
0.1
100
A
Capacitance
V
R
= 0 V
C
O
25
pF
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Collector-base breakdown
voltage
1)
I
C
= 100
A
BV
CBO
70
V
Collector-emitter breakdown
voltage
1)
I
C
= 1.0 mA
BV
CEO
30
V
Emitter-collector breakdown
voltage
1)
I
E
= 100
A
BV
ECO
7.0
V
I
CEO
(dark)
1)
V
CE
= 10 V, (base open)
4N25
5.0
50
nA
4N26
5.0
50
nA
4N27
5.0
50
nA
4N28
10
100
nA
I
CBO
(dark)
1)
V
CB
= 10 V, (emitter open)
2.0
20
nA
Collector-emitter capacitance
V
CE
= 0
C
CE
6.0
pF
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Isolation voltage
1)
Peak, 60 Hz
4N25
V
IO
2500
V
4N26
V
IO
1500
V
4N27
V
IO
1500
V
4N28
V
IO
500
V
Saturation voltage, collector-
emitter
I
CE
= 2.0 mA, I
F
= 50 mA
V
CE(sat)
0.5
V
Resistance, input output
1)
V
IO
= 500 V
R
IO
100
G
Capacitance (input-output)
f = 1.0 MHz
C
IO
0.5
pF
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
DC Current Transfer Ratio
1)
V
CE
= 10 V, I
F
= 10 mA
4N25
CTR
DC
20
50
%
4N26
CTR
DC
20
50
%
4N27
CTR
DC
10
30
%
4N28
CTR
DC
10
30
%
www.vishay.com
4
Document Number 83725
Rev. 1.4, 26-Jan-05
4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors
Switching Characteristics
Typical Characteristics (Tamb = 25
C unless otherwise specified)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Rise and fall times
V
CE
= 10 V, I
F
= 10 mA, R
L
= 100
t
r
, t
f
2.0
s
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED
Current
i4n25_01
100
10
1
.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
I
F
- Forward Current - mA
V
F
-
F
orward
Voltage
-
V
T
A
= 55C
T
A
= 25C
T
A
= 85C
i4n25_02
Normalized to:
0.0
0.5
1.0
1.5
0
1
10
100
I
F
- LED Current - mA
NCTR
NCTR(SAT)
NCTR
-
Normlized
CTR
CTRce(sat) Vce=0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25C
T
A
=25C
Figure 3. Normalized Non-saturated and Saturated CTR vs. LED
Current
Figure 4. Normalized Non-saturated and saturated CTR vs. LED
Current
i4n25_03
100
10
1
.1
0.0
0.5
1.0
1.5
I
F
- LED Current - mA
NCTR
-
Normalized
CTR
Normalized to:
CTRce(sat) Vce=0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25C
NCTR
NCTR(SAT)
T
A
=50C
i4n25_04
100
10
1
.1
0.0
0.5
1.0
1.5
I
F
- LED Current - mA
NCTR
-
Normalized
CTR
Normalized to:
CTRce(sat) Vce=0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25C
NCTR
NCTR(SAT)
T
A
=70C
4N25/ 4N26/ 4N27/ 4N28
Document Number 83725
Rev. 1.4, 26-Jan-05
Vishay Semiconductors
www.vishay.com
5
Figure 5. Normalized Non-saturated and saturated CTR vs. LED
Current
Figure 6. Collector-Emitter Current vs. Temperature and LED
Current
Figure 7. Collector-Emitter Leakage Current vs.Temp.
i4n25_05
100
10
1
.1
0.0
0.5
1.0
1.5
I
F
- LED Current - mA
NCTR
-
Normalized
CTR
Normalized to:
CTRce(sat) Vce = 0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25C
NCTR
NCTR(SAT)
T
A
=85C
i4n25_06
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
50C
70C
85C
I
F
- LED Current - mA
Ice
-
Collector
Current
-
m
A
25C
i4n25_07
100
80
60
40
20
0
20
10
10
10
10
10
10
10
10
2
1
0
1
2
3
4
5
T
A
- Ambient Temperature - C
Iceo
-
Collector-Emitter
-
n
A
Typical
V
ce
= 10 V
Figure 8. Normalized CTRcb vs. LED Current and Temp.
Figure 9. Normalized Photocurrent vs. I
F
and Temp.
Figure 10. Normalized Non-saturated HFE vs. Base Current and
Temperature
i4n25_08
Normalized to:
0.0
0.5
1.0
1.5
25C
50C
70C
I
F
- LED Current - mA
NCTRcb
-
Normalized
CTRcb
.1
1
10
100
Vcb=9.3 V, I
F
=10 mA, T
A
=25
C
i4n25_09
0.
Normalized to:
0.01
1
1
10
I
F
- LED Current - mA
Normalized
Photocurrent
.1
1
10
100
I
F
=10 mA, T
A
=25C
Nib, T
A
=20C
Nib, T
A
= 25C
Nib, T
A
= 50C
Nib, T
A
= 70C
i4n25_10
0.4
0.6
1.0
1.2
Normalized to:
Ib - Base Current -
A
1
10
100
1000
Ib=20
A, Vce=10 V, TA=25C
25C
70C
20C
NHFE
-
Normalized
HFE
0.8
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